Electron mobility in surface- and buried- channel flatband In_0.53Ga_0.47As MOSFETs with ALD Al₂O₃ gate dielectric.

摘要

In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried InGaAs channel devices employing an Atomic Layer Deposited (ALD) AlO gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure.\udPeak electron mobilities of 4300 cm/V·s and 6600 cm/V·s at a carrier density of 3×1012 cm for the surface and buried channel structures respectively were determined. In contrast to similarly scaled inversion-channel devices, we find that mobility in surface channel flatband structures does not drop rapidly with electron density, but rather high mobility is maintained up to carrier concentrations around 4x10 cm before slowly dropping to around 2000 cm/V·s at 1x10M cm. We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for future low power, highly scaled CMO